Avalanche Capability of Unipolar SiC Diodes: A Feature for Ruggedness and Reliability Improvement

Avalanche Capability of Unipolar SiC Diodes: A Feature for Ruggedness and Reliability Improvement

Author(s):

Publication title:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Title of ser.:

Materials science forum

Ser. no.:

615-617

Pub. Year:

2009

Page(from):

659

Page(to):

662

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054140
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	7th
Conf. info. (Venue):	Barcelona, Spain
Conf. info. (Date):	2008.09.07-2008.09.11
Note for article:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Similar Items:

1 Conference Proceedings A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications Treu, M., Rupp, R., Tai, C.S., Blaschitz, P., Hilsenbeck, J., Brunner, H., Peters, D., Elpelt, R., Reimann, T. Trans Tech Publications	7 Conference Proceedings Electro-Thermal SPICE Model for High-Voltage SiC VJFETs R. Elpelt, P. Friedrichs, J. Hippeli, R. Schörner, M. Treu Trans Tech Publications
2 Conference Proceedings Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations J. Hilsenbeck, M. Treu, R. Rupp, K. Rüschenschmidt, R. Kern Trans Tech Publications	8 Conference Proceedings Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability Rupp, R., Treu, M., Turkes, P., Beermann, H., Scherg, T., Preis, H., Cerva, H. Trans Tech Publications
3 Conference Proceedings SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch K. Rueschenschmidt, M. Treu, R. Rupp, P. Friedrichs, R. Elpelt Trans Tech Publications	9 Conference Proceedings A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses R. Rupp, F. Björk, G. Deboy, M. Holz, M. Treu Trans Tech Publications
4 Conference Proceedings Performance and Reliability Issues of SiC-Schottky Diodes Rupp, , R., Treu, M., Mauder, A., Griebl, E., Weyner, W., Bartsch, W., Stephani, D. Trans Tech Publications	10 Conference Proceedings Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC Treu, M., Rupp, R., Kapels, H., Bartsch, W. Trans Tech Publications
5 Conference Proceedings SiC JFETs for Power Module Applications J. Hilsenbeck, Z. Xi, D. Domes, K. Rüschenschmidt, M. Treu Trans Tech Publications	11 Conference Proceedings Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology Treu, M., Rupp, R., Brunner, H., Dahlquist, F., Hecht, Ch. Trans Tech Publications
6 Conference Proceedings Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV Peters, D., Elpelt, R., Schorner, R., Dohnke, K. O., Friedrichs, P., Stephani, D. Trans Tech Publications	12 Conference Proceedings A New 1200V SiC MPS Diode with Improved Performance and Ruggedness M. Draghici, R. Rupp, R. Gerlach, B. Zippelius Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12