Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO2/SiC Interfaces

Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO2/SiC Interfaces

Author(s):

Publication title:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Title of ser.:

Materials science forum

Ser. no.:

615-617

Pub. Year:

2009

Page(from):

525

Page(to):

528

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054140
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	7th
Conf. info. (Venue):	Barcelona, Spain
Conf. info. (Date):	2008.09.07-2008.09.11
Note for article:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Similar Items:

1 Conference Proceedings Energy Band Structure of SiO₂/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer H. Watanabe, T. Kirino, Y. Kagei, J. Harries, A. Yoshigoe Trans Tech Publications	7 Conference Proceedings Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing H. Watanabe, D. Ikeguchi, T. Kirino, S. Mitani, Y. Nakano Trans Tech Publications
2 Conference Proceedings Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces Y. Kagei, T. Kirino, Y. Watanabe, S. Mitani, Y. Nakano Trans Tech Publications	8 Conference Proceedings Re-Investigation of SiC/SiO₂ Interface Passivation by Nitrogen Annealing Z.Y. Peng, Y.Y. Wang, H.J. Shen, Y. Bai, Y.D. Tang, X.M. Chen, C.Z. Li, K.A. Liu, X.Y. Liu Trans Tech Publications
3 Conference Proceedings Impact of Interface Defect Passivation on Conduction Band Offset at SiO₂/4H-SiC Interface T. Hosoi, T. Kirino, A. Chanthaphan, Y. Uenishi, D. Ikeguchi Trans Tech Publications	9 Conference Proceedings Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment Maeyama, Y., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Shirafuji, T. Trans Tech Publications
4 Conference Proceedings Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO₂ Stacked Gate Dielectrics T. Hosoi, Y. Kagei, T. Kirino, Y. Watanabe, K. Kozono Trans Tech Publications	10 Conference Proceedings Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment Maeyama, Y., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Shirafuji, T. Trans Tech Publications
5 Conference Proceedings AION/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices T. Hosoi, M. Harada, Y. Kagei, Y. Watanabe, T. Shimura Trans Tech Publications	11 Conference Proceedings Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties T. Hosoi, D. Nagai, M. Sometani, T. Shimura, M. Takei, H. Watanabe Trans Tech Publications
6 Conference Proceedings Reduction of Charge Trapping Sites in Al₂O₃/SiO₂ Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC … T. Hosoi, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano Trans Tech Publications	12 Conference Proceedings Improvement of SiO₂/4H-SiC Interface Quality by Post-Oxidation Annealing in N₂ at High-Temperatures A. Chanthaphan, Y.H. Cheng, T. Hosoi, T. Shimura, H. Watanabe Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12