Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC

Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC

Author(s):

Publication title:

Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Title of ser.:

Materials science forum

Ser. no.:

615-617

Pub. Year:

2009

Page(from):

49

Page(to):

54

Pages:

6

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054140
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	7th
Conf. info. (Venue):	Barcelona, Spain
Conf. info. (Date):	2008.09.07-2008.09.11
Note for article:	7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain

Similar Items:

1 Conference Proceedings Strain in 3C-SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates M. Zielinski, M. Portail, T. Chassagne, Y. Cordier Trans Tech Publications	7 Conference Proceedings Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne Trans Tech Publications
2 Conference Proceedings Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers M. Zielinski, T. Chassagne, R. Arvinte, A. Michon, M. Portail, S. Contreras, S. Juillaguet, H. Peyre Trans Tech Publications	8 Conference Proceedings Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard, D. Alquier Trans Tech Publications
3 Conference Proceedings Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski Trans Tech Publications	9 Conference Proceedings Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates S. Contreras, L. Konczewicz, R. Arvinte, J. Ben Messaoud, T.L. Wang, H. Peyre, T. Chassagne, M. Zielinski, S. Juillaguet Trans Tech Publications
4 Conference Proceedings Trends in Dopant Incorporation for 3C-SiC Films on Silicon M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras, J. Camassel Trans Tech Publications	10 Conference Proceedings p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail Trans Tech Publications
5 Conference Proceedings Structural and Morphological Characterization of 3C-SiC Films Grown on (111), (211) and (100) Silicon Substrates M. Portail, M. Nemoz, M. Zielinski, T. Chassagne Trans Tech Publications	11 Conference Proceedings Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne Trans Tech Publications
6 Conference Proceedings Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne Trans Tech Publications	12 Conference Proceedings Micromachining of Thin 3C-SiC Films for Mechanical Properties Investigation J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski, D. Alquier Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12