Progress in GaN MOSFET Technology

Progress in GaN MOSFET Technology

Author(s):

Publication title:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Title of ser.:

Materials science forum

Ser. no.:

600-603

Pub. Year:

2009

Pt.:

2

Page(from):

1263

Page(to):

1268

Pages:

6

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054132
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2007
Conf. info. (Venue):	Otsu, Japan
Conf. info. (Date):	2007.10.14-2007.10.19
Note for article:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Similar Items:

1 Conference Proceedings Self-Aligned N+ Polysilicon-Gate GaN MOSFETs Matocha, K., Chow, T.P., Gutmann, R.J. Trans Tech Publications	7 Conference Proceedings Gallium Nitride Power Device Design Tradeoffs Matocha, K., Chow, T.P., Gutmann, R.J. Trans Tech Publications
2 Conference Proceedings Asymmetric Interface Densities on n and p Type GaN MOS Capacitors Huang, W., Khan, T., Chow, T.P. Trans Tech Publications	8 Conference Proceedings Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides Matocha, K., Chow, T.P., Gutmann, R.J. Trans Tech Publications
3 Conference Proceedings Progress in High Voltage SiC and GaN Power Switching Devices T.P. Chow Trans Tech Publications	9 Conference Proceedings SiC and GaN MOS Interfaces - Similarities and Differences T.P. Chow Trans Tech Publications
4 Conference Proceedings Schottky Barrier Modification on n-GaN Using a Shallow p-Type Implant Matocha,K., Chow,T.P., Lu,H., Bhat,I.B. Trans Tech Publications	10 Conference Proceedings 930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing Wang, W., Banerjee, S., Chow, T.P., Gutmann, R.J. Trans Tech Publications
5 Conference Proceedings Optimization of 4H-SiC MOS Properties with Cesium Implantation Y. Wang, T. Khan, T.P. Chow Trans Tech Publications	11 Conference Proceedings Non-Contact Characterization Of Recombination Processes In 4H-SiC Matocha, Kevin, Chow, T.P., Gutmann, R.J. Materials Research Society
6 Conference Proceedings Gallium Nitride Power Device Design Tradeoffs Matocha, K., Chow, T.P., Gutmann, R.J. Trans Tech Publications	12 Conference Proceedings Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures S. Chowdhury, C.W. Hitchcock, T.P. Chow Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12