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1600 V, 5.1 mΩ⋅cm² 4H-SiC BJT with a High Current Gain of β=70

Author(s):
Publication title:
Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
Title of ser.:
Materials science forum
Ser. no.:
600-603
Pub. Year:
2009
Pt.:
2
Page(from):
1155
Page(to):
1158
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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