High-Temperature Static and Dynamic Reliability Study of 4H-SIC Vertical-Channel JFETs for High-Power System Applications

High-Temperature Static and Dynamic Reliability Study of 4H-SIC Vertical-Channel JFETs for High-Power System Applications

Author(s):

Publication title:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Title of ser.:

Materials science forum

Ser. no.:

600-603

Pub. Year:

2009

Pt.:

2

Page(from):

1051

Page(to):

1054

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054132
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2007
Conf. info. (Venue):	Otsu, Japan
Conf. info. (Date):	2007.10.14-2007.10.19
Note for article:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Similar Items:

1 Conference Proceedings High-Temperature Reliability Assessment of 4H-SiC Vertical-Channel JFET Including Forward Bias Stress L. Cheng, M.S. Mazzola, D.C. Sheridan Trans Tech Publications	7 Conference Proceedings Demonstration of SiC Vertical Trench JFET Reliability K.M. Speer, K. Chatty, V. Bondarenko, D.C. Sheridan, K. Matocha Trans Tech Publications
2 Conference Proceedings High-Temperature Operation of 50 A (1600 A/cm²), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications L. Cheng, I. Sankin, V. Bondarenko, M.S. Mazzola, J.D. Scofield Trans Tech Publications	8 Conference Proceedings Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications A. Ritenour, V. Bondarenko, R.L. Kelley, D.C. Sheridan Trans Tech Publications
3 Conference Proceedings Fast Switching (41 MHz), 2.5 mΩ・cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications Cheng, L., Casady, J.R.B., Mazzola, M.S., Bondarenko, V., Kelley, R.L., Sankin, I., Merrett, J.N., Casadv, J.B. Trans Tech Publications	9 Conference Proceedings SiC Smart Power JFET Technology for High-Temperature Applications Sankin, I., Bondarenko, V., Kelley, R.L., Casady, J.B. Trans Tech Publications
4 Conference Proceedings SiC Lateral Trench JFET for Harsh-Environment Wireless Systems I. Sankin, V. Bondarenko, D.C. Sheridan, M.S. Mazzola, J.B. Casady Trans Tech Publications	10 Conference Proceedings Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers A. Maralani, M.S. Mazzola, A.P. Pisano Trans Tech Publications
5 Conference Proceedings A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices J.B. Casady, D.C. Sheridan, R.L. Kelley, V. Bondarenko, A. Ritenour Trans Tech Publications	11 Conference Proceedings Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs Zhao, J.H., Alexandrov, P., Li, Y.Z., Li, L.X., Sheng, K., Lebron-Velilla, R. Trans Tech Publications
6 Technical Paper Silicon Carbide Power Electronics for High-Temperature Power Conversion and Solid-State Circuit Protection in Aircraft Applications. Sheridan, D., Mazzola, M. Society of Automotive Engineers	12 Conference Proceedings Optically Triggered Power Switch Based on 4H-SiC Vertical JFET P. Alexandrov, X.Q. Li, J.H. Zhao Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12