Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration

Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration

Author(s):

Publication title:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Title of ser.:

Materials science forum

Ser. no.:

600-603

Pub. Year:

2009

Pt.:

2

Page(from):

779

Page(to):

782

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054132
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2007
Conf. info. (Venue):	Otsu, Japan
Conf. info. (Date):	2007.10.14-2007.10.19
Note for article:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Similar Items:

1 Conference Proceedings Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides … Senzaki, J., Shimozato, A., Fukuda, K. Trans Tech Publications	7 Conference Proceedings A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer Senzaki, J., Goto, M., Kojima, K., Yamabe, K., Fukuda, K. Trans Tech Publications
2 Conference Proceedings Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer Senzaki, J., Kojima, K., Kato, T., Shimozato, A., Fukuda, K. Trans Tech Publications	8 Conference Proceedings Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing Senzaki, J., Harada, S., Kosugi, R., Suzuki, S., Fukuda, K., Arai, K. Trans Tech Publications
3 Conference Proceedings Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing J. Senzaki, T. Suzuki, A. Shimozato, K. Fukuda, K. Arai Trans Tech Publications	9 Conference Proceedings Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing Senzaki, J., Harada, S., Kosugi, R., Suzuki, S., Fukuda, K., Arai, K. Trans Tech Publications
4 Conference Proceedings Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer J. Senzaki, A. Shimozato, K. Koshikawa, Y. Tanaka, K. Fukuda Trans Tech Publications	10 Conference Proceedings Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC Senzaki, J., Fukuda, K., Arai, K. Trans Tech Publications
5 Conference Proceedings Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers J. Senzaki, A. Shimozato, K. Fukuda Trans Tech Publications	11 Conference Proceedings Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature Senzaki, J., Fukuda, K., Imai, S., Tanaka, Y., Kobayashi, N., Tanoue, H., Okushi, H., Arai, K. Trans Tech Publications
6 Conference Proceedings Gate-Area Dependence of SiC Thermal Oxides Reliability J. Senzaki, A. Shimozato, M. Okamoto, K. Kojima, K. Fukuda Trans Tech Publications	12 Conference Proceedings Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide Senzaki, J., Fukuda, K., Ishida, Y., Tanaka, Y., Tanoue, H., Kobayashi, N., Tanaka, T., Arai, K. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12