Optimization of 4H-SiC MOS Properties with Cesium Implantation
- Author(s):
- Publication title:
- Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
- Title of ser.:
- Materials science forum
- Ser. no.:
- 600-603
- Pub. Year:
- 2009
- Pt.:
- 2
- Page(from):
- 751
- Page(to):
- 754
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2
Trans Tech Publications |
3
Conference Proceedings
Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC
Trans Tech Publications |
9
Conference Proceedings
Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors
Trans Tech Publications |
4
Conference Proceedings
Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |