Blank Cover Image

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

Author(s):
Publication title:
Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
Title of ser.:
Materials science forum
Ser. no.:
600-603
Pub. Year:
2009
Pt.:
1
Page(from):
345
Page(to):
348
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes

J.D. Caldwell, R.E. Stahlbush, O.J. Glembocki, K.D. Hobart, K.X. Liu

Trans Tech Publications
7 Conference Proceedings Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC

Yi Chen, Ning Zhang, Xianrong Huang, Joshua D Caldwell, Kendrick X Liu, Robert E Stahlbush, Michael Dudley

Materials Research Society
2 Conference Proceedings Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy

R.E. Stahlbush, K.X. Liu, Q. Zhang, J.J. Sumakeris

Trans Tech Publications
8 Conference Proceedings On the Luminescence and Driving Force of Stacking Faults in 4H-SiC

J.D. Caldwell, A.J. Giles, R.E. Stahlbush, M.G. Ancona, O.J. Glembocki

Trans Tech Publications
3 Conference Proceedings Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures

Liu, K.X., Stahlbush, R.E., Hobart, K.D., Sumakeris, J.J.

Trans Tech Publications
9 Conference Proceedings Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

R.L. Myers-Ward, K.K. Lew, B.L. VanMil, R.E. Stahlbush, K.X. Liu

Trans Tech Publications
4 Conference Proceedings Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers

N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, K.D. Hobart

Trans Tech Publications
10 Conference Proceedings Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers

N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, M.J. O'Loughlin, A.A. Burk

Trans Tech Publications
5 Conference Proceedings Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

R.E. Stahlbush, B.L. VanMil, K.X. Liu, K.K. Lew, R.L. Myers-Ward

Trans Tech Publications
11 Conference Proceedings Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

M.J. Tadjer, N.A. Mahadik, B.N. Feigelson, R.E. Stahlbush, E.A. Imhoff

Trans Tech Publications
6 Conference Proceedings Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers

Y. Chen, X.R. Huang, N. Zhang, M. Dudley, J.D. Caldwell

Trans Tech Publications
12 Conference Proceedings Influence of Temperature on the Saturation of the Forward Voltage Drift in SiC Pin Diodes

J.D. Caldwell, R. Stahlbush, O. Glembocki, K. Hobart

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12