Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions

Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions

Author(s):

Publication title:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Title of ser.:

Materials science forum

Ser. no.:

600-603

Pub. Year:

2009

Pt.:

1

Page(from):

341

Page(to):

344

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054132
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2007
Conf. info. (Venue):	Otsu, Japan
Conf. info. (Date):	2007.10.14-2007.10.19
Note for article:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

Similar Items:

1 Conference Proceedings Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates M. Katsuno, N. Ohtani, M. Nakabayashi, T. Fujimoto, H. Yashiro Trans Tech Publications	7 Conference Proceedings Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities M. Nakabayashi, T. Fujimoto, M. Katsuno, N. Ohtani, H. Tsuge Trans Tech Publications
2 Conference Proceedings Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals C. Taniguchi, A. Ichimura, N. Ohtani, M. Katsuno, T. Fujimoto Trans Tech Publications	8 Conference Proceedings Micropipe Formation Model via Surface Step Interaction Ohtani, N., Katsuno, M., Fujimoto, T., Aigo, T., Yashiro, H. Trans Tech Publications
3 Conference Proceedings 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness Aigo, T., Sawamura, M., Fujimoto, T., Katsuno, M, Yashiro, H., Tsuge, H., Nakabayashi, M., Hoshino, T., Ohtani, N. Trans Tech Publications	9 Conference Proceedings Micropipe Formation Model via Surface Step Interaction Ohtani, N., Katsuno, M., Fujimoto, T., Aigo, T., Yashiro, H. Trans Tech Publications
4 Conference Proceedings Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules K. Ohtomo, N. Matsumoto, K. Ashida, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge, T. Fujimoto Trans Tech Publications	10 Conference Proceedings Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen- Doped 4H-SiC Substrate D. Fukunaga, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge, T. Fujimoto Trans Tech Publications
5 Conference Proceedings 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots Fujimoto, T., Katsuno, M., Ohtani, N., Aigo, T., Yashiro, H. Trans Tech Publications	11 Conference Proceedings Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications H. Yashiro, T. Fujimoto, N. Ohtani, T. Hoshino, M. Katsuno Trans Tech Publications
6 Conference Proceedings 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots Fujimoto, T., Katsuno, M., Ohtani, N., Aigo, T., Yashiro, H. Trans Tech Publications	12 Conference Proceedings Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality Fujimoto, T., Tsuge, H., Katsuno, M., Ohtani, N., Yashiro, H., Nakabayashi, M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12