Blank Cover Image

In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

Author(s):
Publication title:
Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
Title of ser.:
Materials science forum
Ser. no.:
600-603
Pub. Year:
2009
Pt.:
1
Page(from):
147
Page(to):
150
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers

L. Dong, G.S. Sun, J. Yu, G.G. Yan, W.S. Zhao

Trans Tech Publications
7 Conference Proceedings 10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor

L. Dong, G.S. Sun, J. Yu, G.G. Yan, W.S. Zhao

Trans Tech Publications
2 Conference Proceedings Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection

X.F. Liu, G.S. Sun, Y.M. Zhao, J. Ning, J.Y. Li, L. Wang, W.S. Zhao, M.C. Luo, J.M. Li

Trans Tech Publications
8 Conference Proceedings Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

Sun, G.S., Ning, J., Gong, Q.C., Gao, X., Wang, L., Liu, X.F., Zeng, Y.P., Li, J.M.

Trans Tech Publications
3 Conference Proceedings In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD

Sun, G.S., Luo, M.C., Wang, L., Zhu, S.R., Li, J.M., Zeng, Y.P., Lin, L.Y.

Trans Tech Publications
9 Conference Proceedings Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer

X.F. Liu, G.S. Sun, J.M. Li, Y.M. Zhao, J.Y. Li, L. Wang, W.S. Zhao, M.C. Luo, Y.P. Zeng

Trans Tech Publications
4 Conference Proceedings In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD

Sun, G.S., Luo, M.C., Wang, L., Zhu, S.R., Li, J.M., Zeng, Y.P., Lin, L.Y.

Trans Tech Publications
10 Conference Proceedings Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AIN as a Buffer Layer

Y.M. Zhao, G.S. Sun, X.F. Liu, J.Y. Li, W.S. Zhao

Trans Tech Publications
5 Conference Proceedings Development of Vertical 3×2″ LPCVD System for Fast Epitaxial Growth on 4H-SiC

W.S. Zhao, G.S. Sun, H.L. Wu, G.G. Yan, L. Zheng

Trans Tech Publications
11 Conference Proceedings Elimination of BPD in 5sim;30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor

G. Feng, Y.Q. Sun, W.N. Qian, L.P. Lv, J.H. Zhao

Trans Tech Publications
6 Conference Proceedings Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications

G.S. Sun, J. Ning, X.F. Liu, Y.M. Zhao, J. Li, L. Wang, W.S. Zhao

Trans Tech Publications
12 Conference Proceedings Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at AlxGa1-xN/4H-SiC Interface

Z.W. Shen, F. Zhang, S. Dimitrijev, J.S. Han, L.X. Tian, G.G. Yan, Z.X. Wen, W.S. Zhao, L. Wang, X.F. Liu, G.S. Sun, …

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12