Stability Growth Condition for 3C-SiC Crystals by Solution Technique
- Author(s):
- Publication title:
- Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
- Title of ser.:
- Materials science forum
- Ser. no.:
- 600-603
- Pub. Year:
- 2009
- Pt.:
- 1
- Page(from):
- 63
- Page(to):
- 66
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
9
Conference Proceedings
Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique
Trans Tech Publications |
4
Conference Proceedings
Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
Solution Growth of Self-Standing 6H-SiC Single Crystal Using Metal Solvent
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC
Trans Tech Publications |