Practical Gate-First Metal Gate/Dual High-k CMOS Integration with Low Threshold Voltages

Practical Gate-First Metal Gate/Dual High-k CMOS Integration with Low Threshold Voltages

Author(s):

Publication title:

Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing

Title of ser.:

ECS transactions

Ser. no.:

13(2)

Pub. Year:

2008

Page(from):

209

Page(to):

218

Pages:

10

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776271 [1566776279]

Language:

English

Call no.:

E23400/13-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00001467
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	213th
Conf. info. (Venue):	Phoenix, AZ, USA
Conf. info. (Date):	2008.05.18-2008.05.23
Note for article:	213th ECS Meeting, May 18 - May 23, 2008, Phoenix, AZ

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