Replacing SiO2 - Material and Processing Aspects of New Dielectrics | 東京工業大学附属図書館文献データベース

Replacing SiO₂ - Material and Processing Aspects of New Dielectrics

Author(s):

Publication title:

Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing

Title of ser.:

ECS transactions

Ser. no.:

13(2)

Pub. Year:

2008

Page(from):

3

Page(to):

13

Pages:

11

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776271 [1566776279]

Language:

English

Call no.:

E23400/13-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00001467
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	213th
Conf. info. (Venue):	Phoenix, AZ, USA
Conf. info. (Date):	2008.05.18-2008.05.23
Note for article:	213th ECS Meeting, May 18 - May 23, 2008, Phoenix, AZ

Similar Items:

1 Conference Proceedings Workfunction (WF) Simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 Capped High-κ Stacks N. Van der Heyden, G. Pourtois, S. De Gendt, M. Heyns, A. Stesmans Electrochemical Society	7 Conference Proceedings Alternative Gate Dielectric Materials S. Van Elshocht, A. Hardy, S. De Gendt, C. Adelmann, P. K. Baumann, D. P. Brunco, M. R. Caymax, F. Conard, P. Delugas, … Electrochemical Society
2 Conference Proceedings DyScHfOx as High-k Gate Dielectrics: Structural and Electrical Properties C. Adelmann, S. Van Elshocht, P. Lehnen, T. Canard, A. Franquet, C. Zhao, L. Ragnarsson, V. Chang, H. Choi, Y. Hong-Yu, … Electrochemical Society	8 Conference Proceedings Dielectric Properties of High-ε Materials : A Theoretical View V. Fiorentini, P. Delugas, A. Filippetti, G. Pourtois Electrochemical Society
3 Conference Proceedings Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications A. Delabie, L. Nyns, F. Bellenger, M. Caymax, T. Conard Electrochemical Society	9 Conference Proceedings Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications Kaushik, V., De Gendt, S., Caymax, M., Young, E., Rohr, E., Van Elshocht, S., Delabie, A., Claes, M., Shi, X., Chen, I., … Electrochemical Society
4 Conference Proceedings High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies Caymax, Matty, Bender, H., Brijs, B., Conard, T., Gendt, S. De, Delabie, A., Heyns, M., Onsia, B., Ragnarsson, L., … Materials Research Society	10 Conference Proceedings NANOCOMPOSITE DIELECTRIC MATERIAL: Au/SiO2-GEL Vezzoli, G.C., Chen, M.F. Materials Research Society
5 Conference Proceedings HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle L. Nyns, A. Delabie, M. Caymax, M.M. Heyns, S. Van Elshocht Electrochemical Society	11 Conference Proceedings ZnO-Nb₂O₅-TiO₂ Dielectric Resonators and Porosity Influence on Dielectric Constant Values M.C.A. Nono, P.J. Castro, E.G.L. Rangel, S.L. Mineiro Trans Tech Publications
6 Conference Proceedings Atomic Layer Deposition of HfO2 on (100) and (110) Oriented Silicon Surfaces L. Nyns, L. Ragnarsson, L. Hall, A. Delabie, M. Heyns Electrochemical Society	12 Conference Proceedings Processing of Aqueous Tape Casting of Glass-Ceramic in the SiO₂-Al₂O₃-MgO-Li₂O System with ZrO₂ and … M.S. da Silveira, C.M.A. Lopes, F.C.L. Melo, R.M. Rocha Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12