Electrical Characteristics of Low-Temperature Poly-Silicon Thin-Film Transistor Using a Stacked Pr2O3/SiOxNy Gate Dielectric

Electrical Characteristics of Low-Temperature Poly-Silicon Thin-Film Transistor Using a Stacked Pr₂O₃/SiO_xN_y Gate Dielectric

Author(s):

Publication title:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment

Title of ser.:

ECS transactions

Ser. no.:

13(1)

Pub. Year:

2008

Page(from):

151

Page(to):

155

Pages:

5

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776264 [1566776260]

Language:

English

Call no.:

E23400/13-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00001466
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	213th
Conf. info. (Venue):	Phoenix, AZ, USA
Conf. info. (Date):	2008.05.18-2008.05.23
Note for article:	213th ECS Meeting, May 18 - May 23, 2008, Phoenix, AZ

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