Blank Cover Image

AlGaN/GaN HEMTs Fabricated on Selectively Grown Mesas on Si(111)

Author(s):
Publication title:
State-of-the-art program on compound semiconductors 47 (SOTAPOCS 47) and wide-bandgap semiconductor materials and devices 8
Title of ser.:
ECS transactions
Ser. no.:
11(5)
Pub. Year:
2007
Page(from):
271
Page(to):
276
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775717 [156677571X]
Language:
English
Call no.:
E23400/11-5
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings X-Ray and Electrical Characterization of Optimized Ti/Al/Ti/Au Ohmic Contacts for AlGaN/GaN HEMTs

J. A. Bardwell, S. Haffouz, H. Tang, R. Wang

Electrochemical Society
7 Conference Proceedings The Ammonia- MBE Approach for High Electron Mobility in GaN Epilayers And AlGaN/GaN HFET *

Tang, H., Webb, J.B., Bardwell, J.A.

Electrochemical Society
2 Conference Proceedings Characterization of AlGaN/GaN HEMT Devices Grown by MBE

MacElwee, T. W., Bardwell, J. A., Tang, H., Webb, J. B.

Trans Tech Publications
8 Conference Proceedings Mg Surface Treatment for Optimizing Contact and Bulk Properties of p-type GaN Grown by Ammonia- Molecular-Beam Epitaxy

Tang, H., Bardwell, J.A., Webb, J.B., Rolfe, S., Moisa, S., Sproule, I., Raymond, S.

Electrochemical Society
3 Conference Proceedings The Effect of Surface Cleaning on Current Collapse in AlGaN/GaN HEMTs

J. Bardwell, S. Haffouz, R. McKinnon, C. Storey, H. Tang, G. Sproule, D. Roth, R. Wang

Electrochemical Society
9 Conference Proceedings High Performance AlGaN/GaN HEMTs with Recessed Gate

Sano, Y., Mita, J., Yamada, T., Makita, T., Kaifu, K., Ishikawa, H., Egawa, T., Jimbo, T.

Trans Tech Publications
4 Conference Proceedings AlGaN/GaN Transistors and Circuits

J. Bardwell, T. Lester, H. Tang, B. Surridge, A. Harrison

Electrochemical Society
10 Conference Proceedings High Performance AlGaN/GaN HEMTs with Recessed Gate

Sano, Y., Mita, J., Yamada, T., Makita, T., Kaifu, K., Ishikawa, H., Egawa, T., Jimbo, T.

Trans Tech Publications
5 Conference Proceedings HVPE-Grown AlGaN/GaN HEMTs

Luo, B., Ren, F., Mastro, M. A., Tsvetkov, D., Pechnikov, A., Soukhoveev, V., Dmitriev, V., Baik, K. H., Pearton, S. J.

Materials Research Society
11 Conference Proceedings AlGaN/GaN HEMTs with Recessed Ohmic Electrodes on Si Substrates

K. Kaifu, J. Mita, M. Ito, Y. Sano, H. Ishikawa, T. Egawa

Electrochemical Society
6 Conference Proceedings Plasma-Assisted MBE Growth of GaN on GaN/Sapphire Templates Grown In Situ by Ammonia- MBE

Tang, H., Rolfe, S., Beaulieu, M., Sproule, I., Haffouz, S., Web, J.

Electrochemical Society
12 Conference Proceedings High-performance AIGaN-GaN HEMT materials and devices grown and fabricated on Si substrates

Z. H. Feng, J. Y. Yin, F. P. Yuan, B. Liu, Z. Feng

Society of Photo-optical Instrumentation Engineers
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12