Enhanced Light Extraction Efficiency in InGaN Light-Emitting Diodes Through Photoelectrochemical Sidewall Shaping Process

Enhanced Light Extraction Efficiency in InGaN Light-Emitting Diodes Through Photoelectrochemical Sidewall Shaping Process

Author(s):

Publication title:

State-of-the-art program on compound semiconductors 47 (SOTAPOCS 47) and wide-bandgap semiconductor materials and devices 8

Title of ser.:

ECS transactions

Ser. no.:

11(5)

Pub. Year:

2007

Page(from):

111

Page(to):

115

Pages:

5

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775717 [156677571X]

Language:

English

Call no.:

E23400/11-5

Type:

Conference Proceedings

Details

TDL ID:	ZA00013284
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	212th
Conf. info. (Venue):	Washington, DC, USA
Conf. info. (Date):	2007.10.07-2007.10.12
Note for article:	212th ECS Meeting : State-of-the-Art Program on Compound Semiconductors 47 (SOTAPOCS 47), October 7 - October 12, 2007, Washington, DC

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