EOT Measurement of Ultra-Thin Gate Dielectrics using the Tunneling Current Regime

EOT Measurement of Ultra-Thin Gate Dielectrics using the Tunneling Current Regime

Author(s):

Publication title:

Analytical and diagnostic techniques for semiconductor materials, devices and processes 7

Title of ser.:

ECS transactions

Ser. no.:

11(3)

Pub. Year:

2007

Page(from):

97

Page(to):

106

Pages:

10

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775694 [1566775698]

Language:

English

Call no.:

E23400/11-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00013285
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	212th
Conf. info. (Venue):	Washington, DC, USA
Conf. info. (Date):	2007.10.07-2007.10.12
Note for article:	212th ECS Meeting, October 7 - October 12, 2007, Washington, DC

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