Heteroepitaxy of InP on Silicon-on-Insulator for Optoelectronic Integration

Heteroepitaxy of InP on Silicon-on-Insulator for Optoelectronic Integration

Author(s):

Publication title:

Integrated Optoelectronics 3

Title of ser.:

ECS transactions

Ser. no.:

3(39)

Pub. Year:

2007

Page(from):

23

Page(to):

29

Pages:

7

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781604239157 [1604239158]

Language:

English

Call no.:

E23400/3-39 [39]

Type:

Conference Proceedings

Details

TDL ID:	ZA00046571
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	210th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03
Note for article:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

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