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Loading Effects in the Selective Epitaxial Growth of n-Type Doped SiGe-Structures with LPCVD

Author(s):
Publication title:
Solid-State Joint Session (General)
Title of ser.:
ECS transactions
Ser. no.:
3(33)
Pub. Year:
2007
Page(from):
31
Page(to):
34
Pages:
4
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781604239102 [1604239107]
Language:
English
Call no.:
E23400/3-30 [33]
Type:
Conference Proceedings

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