Influences of Gate Recess Structure on the DC Characteristics of 0.1 Micron Metamorphic HEMTs

Influences of Gate Recess Structure on the DC Characteristics of 0.1 Micron Metamorphic HEMTs

Author(s):

Publication title:

State-of-the-Art Program on Compound Semiconductors XLIV

Title of ser.:

ECS transactions

Ser. no.:

2(5)

Pub. Year:

2006

Page(from):

71

Page(to):

77

Pages:

7

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774420 [156677442X]

Language:

English

Call no.:

E23400/2-4 [5]

Type:

Conference Proceedings

Details

TDL ID:	ZA00046577
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	209th
Conf. info. (Venue):	Denver, Colorado, USA
Conf. info. (Date):	2006.05.07-2006.05.12
Note for article:	209th ECS Meeting, May 7-May 12, 2006, Denver, Colorado

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