Selective Epitaxial Growth of Arsenic-Doped SiGe Structures with LPCVD
- Author(s):
- Publication title:
- Solid-State Posters (General)
- Title of ser.:
- ECS transactions
- Ser. no.:
- 1(30)
- Pub. Year:
- 2006
- Page(from):
- 33
- Page(to):
- 40
- Pages:
- 8
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566774826 [1566774829]
- Language:
- English
- Call no.:
- E23400/1-26 [30]
- Type:
- Conference Proceedings
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