Enhanced Boron Activation in Strained-Si/Si<sub>1-x</sub>Ge<sub>x</sub> Substrate Using Laser Annealing

Enhanced Boron Activation in Strained-Si/Si_1-xGe_x Substrate Using Laser Annealing

Author(s):

Publication title:

Solid-State Posters (General)

Title of ser.:

ECS transactions

Ser. no.:

1(30)

Pub. Year:

2006

Page(from):

1

Page(to):

6

Pages:

6

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774826 [1566774829]

Language:

English

Call no.:

E23400/1-26 [30]

Type:

Conference Proceedings

Details

TDL ID:	ZA00053418
Series ID:	PA00000034
Conf. info. (Name):	ECS meeting
Conf. info. (Number):	208th
Conf. info. (Venue):	Los Angeles, California, USA
Conf. info. (Date):	2005.10.16-2005.10.21
Note for article:	208th ECS Meeting, October 16-October 21, 2005, Los Angeles, California

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Enhanced Boron Activation in Strained-Si/Si1-xGex Substrate Using Laser Annealing

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Enhanced Boron Activation in Strained-Si/Si_1-xGe_x Substrate Using Laser Annealing