Comparison of Electrical and Structural Properties of HfO2 Thin Films on Strained and Relaxed Si1-xGex

Comparison of Electrical and Structural Properties of HfO₂ Thin Films on Strained and Relaxed Si_1-xGe_x

Author(s):

Publication title:

SiGe and Ge, materials, processing, and devices

Title of ser.:

ECS transactions

Ser. no.:

3(7)

Pub. Year:

2006

Page(from):

1223

Page(to):

1228

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775076 [1566775078]

Language:

English

Call no.:

E23400/3-7

Type:

Conference Proceedings

Details

TDL ID:	ZA00047115
Series ID:	PA00000034
Conf. info. (Name):	SiGe and Ge Materials, Processing, and Devices Symposium ; Joint International Electrochemical Society Meeting ; Meeting of the Electrochemical Society ; Congreso de la Sociedad Mexicana de Electroquimica
Conf. info. (Number):	2nd ; 2006 ; 210th ; 21st
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03
Note for article:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

Similar Items:

1 Conference Proceedings Electrical and Structural Properties of High-K HfO₂ on Si₁₋x Gex Substrates C. Hwang, T. Park, J. Kim, S. H. Hong, M. Seo, J. H. Jang Electrochemical Society	7 Conference Proceedings Effects of O₂ Ambient on Structural, Optical and Electrical Properties of Hafnium Oxide Thin Films Prepared by E-Beam Evaporation C. Yang, Z.M. Chen, Y.X. Xi, T. Lin Trans Tech Publications
2 Conference Proceedings Light-emitting and Structural Properties of Si-rich HfO₂ Thin Films Fabricated by RF Magnetron Sputtering D. Khomenkov, Y.-T. An, X. Portier, C. Labbe, F. Gourbilleau Materials Research Society	8 Conference Proceedings Improvement in Thermal Stability of MOCVD HfO₂ Films Using an ALD SiNx Interfacial Layer H. J. Jang, S. H. Hong, T. Park, J. Heo, S. Yang, M. Kim, C. Hwang Electrochemical Society
3 Conference Proceedings Influence of an In-Situ Formed Interfacial SINx Layer on the Electrical Performance and Thermal Stability of High-k HfO₂ Films S. H. Hong, J. Kim, T. Park, J. Won, R. Jung, S. Kim, C. Hwang, M. J. Cho Electrochemical Society	9 Conference Proceedings Influence of Deposition Temperature of Atomic-Layer-Deposited HfO₂ Films on Interfacial Chemical Structure and Interface Trap Density J. Kim, T. Park, C. Hwang, S. H. Hong, M. Seo Electrochemical Society
4 Conference Proceedings The Improvement in Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO₂ Thin Films by In-Situ NH₃ Injection J. Kim, T. Park, M. Cho, M. Seo, J. Jang, C. Hwang Electrochemical Society	10 Conference Proceedings Crystallization and Wet Etching Characteristics of Atomic Layer Deposited HfO₂ Films Using Hf[N(CH₃)(C₂H₅)]₃[OC(CH₃)₃]) Precursor and O₃ Oxidant M. Seo, S. Kim, K. Kim, T. Park, J. Kim, C. Hwang, H. Cho Electrochemical Society
5 Conference Proceedings Correlation Between High-K Properties and Interfacial Chemical Structure of ALD HhO2 Thin Films on Si, Sil-xGex and Ge Substrates T. Park, J. Kim, J. Jang, M. Seo, C. Hwang Electrochemical Society	11 Conference Proceedings Structural, Electrical and Optical Properties of Ternary Al_2xIn_2(1-x)O₃ Films Prepared by Metal Organic Chemical Vapor … X.J. Du, X.J. Feng, W.G. Wang, C.N. Luan, J. Ma Trans Tech Publications
6 Conference Proceedings Structural and Electrical Properties of High Pressure Hydrogen Post-Annealed Pt-Er Alloy Metal Gate on HfO2 Film C. Choi, M. Jang, Y. Kim, M. Jeon, S. Lee, H. Yang, R. Jung, M Chang, H. Hwang Electrochemical Society	12 Conference Proceedings Analysis of Electrically Active Defects at Si(1OO)-HfO₂ Interfaco B. J. O'Sullivan, E. O'Connor, P. K. Hurley, M. Modreanu, F. Roussel, N. Roussel, M. A. Audiar, J. P. Senateur, Q. Fang, … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12