Ge Diffusion in Strained Si / Relaxed SiGe Heterostrucutures

Ge Diffusion in Strained Si / Relaxed SiGe Heterostrucutures

Author(s):

Publication title:

SiGe and Ge, materials, processing, and devices

Title of ser.:

ECS transactions

Ser. no.:

3(7)

Pub. Year:

2006

Page(from):

1099

Page(to):

1108

Pages:

10

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775076 [1566775078]

Language:

English

Call no.:

E23400/3-7

Type:

Conference Proceedings

Details

TDL ID:	ZA00047115
Series ID:	PA00000034
Conf. info. (Name):	SiGe and Ge Materials, Processing, and Devices Symposium ; Joint International Electrochemical Society Meeting ; Meeting of the Electrochemical Society ; Congreso de la Sociedad Mexicana de Electroquimica
Conf. info. (Number):	2nd ; 2006 ; 210th ; 21st
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03
Note for article:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

Similar Items:

1 Conference Proceedings Wet-Cleaning and Surface Characterization of Si₁₋xGex Relaxed Alloys (x=0.2-0.5) After Polishing: Applications for SGOI and Strained Silicon Structures … A. Abbadie, J. M. Hartmann, P. Besson, D. Rouchon, P. Holliger, C. Di Nardo, T. Lardin, Y. Campidelli, B. Ghyselen, T. … Electrochemical Society	7 Conference Proceedings (13.2) 8:30 - 8:50 AM - Thin Compliant SiGe for Relaxed SiGe and Strained Si Growth Jernigan, G. G., Twigg, M. E., Fatemi, M., Bassim, N. D., Thompson, P. E.(US Naval Research Laboratory) Electrochemical Society
2 Conference Proceedings Structural Properties of Tensile-Strained Si Layers Grown on Si0.6Ge0.4 and Si0.5Ge0.5 Virtual Substrates J. Hartmann, A. Abbadie, D. Rouchon, Y. Guinche, P. Holliger Electrochemical Society	8 Conference Proceedings Structural Properties of Tensile-Strained Si Layers Grown on Si₁₋xGex Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5) J. Hartmann, D. Rouchon, J. Barnes, M. Mermoux, T. Billon Electrochemical Society
3 Conference Proceedings Dopant Diffusion in Strained and Relaxed Si1-xGex Paine,A.D.N., Morooka,M., Willoughby,A.F.W., Bonar,J.M., Phillips,P., Dowsett,M.G., Cooke,G. Trans Tech Publications	9 Conference Proceedings (9.4) 11:40 - 12:00 PM - High Ge Content Si/SiGe Heterostructures for Microelectronics and Optoelectronics Purposes Bogumilowicz, Y., Hartmann, J.M., Damlencourt, J.F., Vandelle, B., Abbadie, A., Papon, A.-M., Rolland, G., Holliger, P., … Electrochemical Society
4 Conference Proceedings Strained Silicon on Insulator Wafers Made by the Smart CutTM Technology Ghyselen, B., Bogumilowicz, Y., Aulnette, C., Abbadie, A., Osternaud, B., Besson, P., Daval, N., Andrieu, F., … Materials Research Society	10 Conference Proceedings From Thin Relaxed SiGe Buffer Layers to Strained Silicon Directly on Oxide S. Mantl, D. Buca, B. Holländer, S. Lenk, N. Hueging Electrochemical Society
5 Conference Proceedings Strained Si-on-Insulator Fabricated From Elastically-Relaxed Si/SiGe Structures Mooney, P.M., Cohen, G.M., Chen, H., Chu, J.O., Klymko, N. Materials Research Society	11 Conference Proceedings Strain Relaxation of Ion-Implanted Strained Silicon on Relaxed SiGe Crosby, R.T., Jones, K.S., Law, M.E., Saavedra, A.F., Hansen, J.L., Larsen, A.N., Liu, J. Materials Research Society
6 Conference Proceedings On the mechanism of the Smart CutTM layer transfer in relaxed SiGe Nguyen, P., Aulnette, C., Guiot, E., Daval, N., Bourdelle K.K., Cayrefourcq, I., Deguet, C., Sartori, S., Tauzin, A., … Electrochemical Society	12 Conference Proceedings (11.3) 4:00 - 4:20 PM - Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer Isaacson, D. M., Taraschi, G., Pitera, A. J., Ariel, N., Fitzgerald, E. A. (MIT) Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12