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Parasitic Electrostatic Capacitances in Si/SiGe n-HFET

Author(s):
Publication title:
SiGe and Ge, materials, processing, and devices
Title of ser.:
ECS transactions
Ser. no.:
3(7)
Pub. Year:
2006
Page(from):
989
Page(to):
999
Pages:
11
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775076 [1566775078]
Language:
English
Call no.:
E23400/3-7
Type:
Conference Proceedings

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