High Performance, Ultra-thin, Strained-Ge, Heterostructure FETs With High Mobility And Low Leakage

High Performance, Ultra-thin, Strained-Ge, Heterostructure FETs With High Mobility And Low Leakage

Author(s):

Publication title:

SiGe and Ge, materials, processing, and devices

Title of ser.:

ECS transactions

Ser. no.:

3(7)

Pub. Year:

2006

Page(from):

687

Page(to):

695

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775076 [1566775078]

Language:

English

Call no.:

E23400/3-7

Type:

Conference Proceedings

Details

TDL ID:	ZA00047115
Series ID:	PA00000034
Conf. info. (Name):	SiGe and Ge Materials, Processing, and Devices Symposium ; Joint International Electrochemical Society Meeting ; Meeting of the Electrochemical Society ; Congreso de la Sociedad Mexicana de Electroquimica
Conf. info. (Number):	2nd ; 2006 ; 210th ; 21st
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03
Note for article:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

Similar Items:

1 Conference Proceedings Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs T. Krishnamohan, A. Pham, C. Jungemann, B. Meinerzhagen, K. Saraswat Electrochemical Society	7 Conference Proceedings High dose Implantation Impact on the Carrier Mobility in Ultra-Thin Unstrained and Strained SOI Films C. Dupre, P. Fazzini, T. Ernst, F. Cristiano, J. Hartmann, A. Claverie, F. Andrieu, O. Faynot, P. Rivallin, F. Laugier, … Electrochemical Society
2 Conference Proceedings Performance Evaluation of 15nm Gate Length Double-Gate n-MOSFETs with High Mobility Channels: III-V, Ge and Si D. Kim, T. Krishnamohan, K. Saraswat Electrochemical Society	8 Conference Proceedings Mobility Characterization by Magnetoresistance in Ultra Thin SOI Ring-FETs T. V. Chandrasekhar Rao, S. Cristoloveanu, J. Antoszewski, T. Nguyen, H. Hovel, P. Genlil, L. Faraone Electrochemical Society
3 Conference Proceedings Performance Limitations of Si Bulk CMOS and Alternatives for future ULSI K.C. Saraswat, D. Kim, T. Krishnamohan, A. Pethe Electrochemical Society	9 Conference Proceedings Response surface optimization for high-performance solid-phase crystallized silicon-germanium thin film transistors Subramanian,V., Saraswat,K.C., Hovagimian,H., Mehlhaff,J. SPIE-The International Society for Optical Engineering
4 Conference Proceedings Germanium for High Performance MOSFETs and Optical Interconnects K. Saraswat, D. Kim, T. Krishnamohan, D. Kuzum, A.K. Okyay Electrochemical Society	10 Conference Proceedings Effect of a silicon interlayer in low-temperature poly-SiGe thin film transistors Wang,A.W., Saraswat,K.C. SPIE-The International Society for Optical Engineering
5 Conference Proceedings STUDY OF GERMANIUM SURFACE IN WET CHEMICAL SOLUTIONS FOR SURFACE CLEANING APPLICATIONS J. Kim, K. Saraswat, Y. Nishi Electrochemical Society	11 Conference Proceedings Dramatic Improvement of V fb Shift and Gm max with Ultra-thin and Ultra-low-leakage SiN-based SiON Gate Dielectrics K. Muraoka, D. Matsushita, Y. Nakasaki, K. Kato, S. Kikuchi, K. Sakuma, Y. Mitani, K. Eguchi, M. Takayanagi Electrochemical Society
6 Conference Proceedings Effect of Annealing Ambient on Performance and Reliability of Low Pressure Chemical Vapor Deposited Oxides for Thin-Film Transistors Bhat, N., Wang, A., Saraswat, K. C. MRS - Materials Research Society	12 Conference Proceedings Interference-enhanced Raman Scattering in Strain Characterization of Ultra-Thin Strained SiGe and Si Films on Insulator Yin, Haizhou, Hobart, K.D., Shieh, S.R., Peterson, R.L., Duffy, T.S., Sturm, J.C. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12