Analysis of Hole Transport in Arbitrarily Strained Germanium

Analysis of Hole Transport in Arbitrarily Strained Germanium

Author(s):

Publication title:

SiGe and Ge, materials, processing, and devices

Title of ser.:

ECS transactions

Ser. no.:

3(7)

Pub. Year:

2006

Page(from):

443

Page(to):

450

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775076 [1566775078]

Language:

English

Call no.:

E23400/3-7

Type:

Conference Proceedings

Details

TDL ID:	ZA00047115
Series ID:	PA00000034
Conf. info. (Name):	SiGe and Ge Materials, Processing, and Devices Symposium ; Joint International Electrochemical Society Meeting ; Meeting of the Electrochemical Society ; Congreso de la Sociedad Mexicana de Electroquimica
Conf. info. (Number):	2nd ; 2006 ; 210th ; 21st
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03
Note for article:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

Similar Items:

1 Conference Proceedings Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations E. Ungersboeck, V. Sverdlov, H. Kosina, S. Selberherr Electrochemical Society	7 Conference Proceedings Efficient Calculation of Lifetime Based Direct Turmeling Through Stacked Dielectrics H. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr Electrochemical Society
2 Conference Proceedings Comparative analysis of pseudo-potential and tight-binding band structure calculations with an analytical two-band k-p model: conduction band of silicon V. A. Sverdlov, H. Kosina, S. Selberherr Society of Photo-optical Instrumentation Engineers	8 Conference Proceedings A Simulation Study of Partially Depleted SOT MOSFETs Gritsch, M., Kosina, H., Grasser, T., Selberherr, S. Electrochemical Society
3 Conference Proceedings Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model Gritsch, M., Kosina, H., Grasser, T., Selberherr, S. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices Ayalew, T., Grasser, T., Kosina, H., Selberherr, S. Trans Tech Publications
4 Conference Proceedings Numerical Analysis of Gate Stacks M. Karner, S. Holzer, W. Goes, M. Vasicek, M. Wagner, H. Kosina, S. Selberherr Electrochemical Society	10 Conference Proceedings Limitations of Hydrodynamic and Energy-Transport Models Grasser, T., Selberherr, S. SPIE-The International Society for Optical Engineering
5 Conference Proceedings Influence of dopant species on electron mobility in heavily doped semiconductors Kaiblinger-Grujin,G., Kosina,H., Kopf,Ch., Selberherr,S. Trans Tech Publications	11 Conference Proceedings Hole Mobility Behavior in Strained SiGe-on-SOI p-MOSFETs T. Shim, S. Kim, G. Lee, K. Kim, W. Cho Electrochemical Society
6 Conference Proceedings Modeling of Advanced Semiconductor Devices Enzo Ungersboeck, Viktor Sverdlov, Hans Kosina, Siegfried Selberherr Electrochemical Society	12 Conference Proceedings Three-dimensional photolithography simulator including rigorous nonplanar exposure simulation for off-axis illumination Kirchauer,H., Selberherr,S. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12