Deposition and Characterization of Strained SiGe Layer as an Etch Stop in Ultrathin SOI Integration

Deposition and Characterization of Strained SiGe Layer as an Etch Stop in Ultrathin SOI Integration

Author(s):

Publication title:

SiGe and Ge, materials, processing, and devices

Title of ser.:

ECS transactions

Ser. no.:

3(7)

Pub. Year:

2006

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775076 [1566775078]

Language:

English

Call no.:

E23400/3-7

Type:

Conference Proceedings

Details

TDL ID:	ZA00047115
Series ID:	PA00000034
Conf. info. (Name):	SiGe and Ge Materials, Processing, and Devices Symposium ; Joint International Electrochemical Society Meeting ; Meeting of the Electrochemical Society ; Congreso de la Sociedad Mexicana de Electroquimica
Conf. info. (Number):	2nd ; 2006 ; 210th ; 21st
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03
Note for article:	No paper. 210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

Similar Items:

1 Conference Proceedings Characterisation of SOI Thin Film Transistors Fabricated Using SiGe Etch Stop Layers Uppal, S, Gay, D, Armstrong, G A, McNeill, D W, Baine, P, Armstrong, B M, Gamble, H S, Yallup, K Electrochemical Society	7 Conference Proceedings Low Temperature Bonding of PECVD Silicon Dioxide Layers P.T. Baine, M. Bain, D.W. McNeill, H.S. Gamble, M. Armstrong Electrochemical Society
2 Conference Proceedings Silicon Wafer Direct Bonding for Smart-Cut SOI with Buried Tungsten Silicide Layer Suder, S.L., Hurley, R., Li, F.X., Bain, M., Baine, P., MeNeill, D.W., Armstrong, B.M., Gamble, H.S. Electrochemical Society	8 Conference Proceedings OXIDATION OF STRAINED SiGe LAYERS GROWN BY MBE Patton, G. L., Iyer, S. S., Deale, S. L., Ganin, E., McIntosh, R. C. Materials Research Society
3 Conference Proceedings BE-SOI WITH ETCH STOP LAYERS GROWN BY RTCVD D. Feijóo, M.L. Green, D. Brasen, H.S. Luftman, B.B. Weir, J. Blanco, T. Boone, L.C. Feldman Electrochemical Society	9 Conference Proceedings Nanocavity Structures produced by ion implantation into silicon for semiconductor applications Hurley, R. E., Gamble, H. S., Suder, S. Springer
4 Conference Proceedings SOI Production using Polish Stops Formed by Trench before Bond Techniques Gay, D.L., Baine, P.T., Armstrong, B.M., Gamble, H.S. Electrochemical Society	10 Conference Proceedings Manufacturability and printability of AAPSM with transparent etch stop layer [6281-54] Cangemi, M., Philipsen, V., De Ruyter, R., Leunissen, L., Morgana, N., Sixt, P., Cottle, R., Kasprowicz, B. SPIE - The International Society of Optical Engineering
5 Conference Proceedings Besoi using a Silicon Germanium Etch Stop Li, X., Gay, D.L., McNeill, D.W., Armstrong, B.M., Gamble, H.S. Electrochemical Society	11 Conference Proceedings Monolithic integration of strained-layer InGaAs/GaAs/AIGaAs lasers with photodiodes by selective-area MOCVD Lammert,R.M., Mena,P.V., Forbes,D.V., Osowski,M.L., Kang,S.M., Coleman,J.J. SPIE-The International Society for Optical Engineering
6 Conference Proceedings Growth and Characterization of UHV/CVD Si/SiGe Strained-Layer Superlattices on Bulk Crystal SiGe Substrates Sheng, S.R., Dion, M., McAlister, S.P., Rowell, N.L. Materials Research Society	12 Conference Proceedings Towards SiGe Terahertz VCSELs Kelsall, R.W., Ikonic, Z., Harrison, P., Paul, D.J., Lynch, S.A., Bates, R., Norris, D.J., Liew, S.L., Cullis, A.G., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12