Noise and Mobility Characteristics of Bulk and Fully Depleted SOI pMOSFETs using Si and SiGe channels

Noise and Mobility Characteristics of Bulk and Fully Depleted SOI pMOSFETs using Si and SiGe channels

Author(s):

Publication title:

SiGe and Ge, materials, processing, and devices

Title of ser.:

ECS transactions

Ser. no.:

3(7)

Pub. Year:

2006

Page(from):

67

Page(to):

72

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775076 [1566775078]

Language:

English

Call no.:

E23400/3-7

Type:

Conference Proceedings

Details

TDL ID:	ZA00047115
Series ID:	PA00000034
Conf. info. (Name):	SiGe and Ge Materials, Processing, and Devices Symposium ; Joint International Electrochemical Society Meeting ; Meeting of the Electrochemical Society ; Congreso de la Sociedad Mexicana de Electroquimica
Conf. info. (Number):	2nd ; 2006 ; 210th ; 21st
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03
Note for article:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

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