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The Novel Highly-Selective Etching Process of SiO2 to TiSix for Nano-Scale Device Fabrication

Author(s):
Publication title:
Solid State (General) - 214th ECS Meeting/PRiME 2008
Title of ser.:
ECS transactions
Ser. no.:
16(40)
Pub. Year:
2009
Page(from):
47
Page(to):
59
Pages:
13
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781615673124 [1615673121]
Language:
English
Call no.:
E23400/16-36 [40]
Type:
Conference Proceedings

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