Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices

Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices

Author(s):

Publication title:

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

Title of ser.:

ECS transactions

Ser. no.:

16(10)

Pub. Year:

2008

Page(from):

513

Page(to):

527

Pages:

15

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776561 [1566776562]

Language:

English

Call no.:

E23400/16-10

Type:

Conference Proceedings

Details

TDL ID:	ZA00047173
Series ID:	PA00000034
Conf. info. (Name):	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium ; PRiME Joint International Conference
Conf. info. (Number):	3rd ; 2008
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	3rd SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12-17, 2008

Similar Items:

1 Conference Proceedings Defect Engineering Considerations for Strained Silicon Substrates C. Claeys, G. Eneman, M. Scholz, R. Loo, P. Verheyen, K. De Meyer, E. R. Simoen Electrochemical Society	7 Conference Proceedings The Low-Frequency Noise in n-MOSFETs on Strained Silicon: Is There Room for Improvement? Simoen, E., Eneman, G., Verheyen, P., Delhougne, R., Rooyackers, R., Loo, R., Vandervorst, W., De Meyer, K., Claeys, C. Electrochemical Society
2 Conference Proceedings Diode Analysis of Electrically Active Defects in Recessed SiGe Source/Drain Diodes E.R. Simoen, M.B. Gonzalez, G. Eneman, P. Verheyen, C.L. Claeys Electrochemical Society	8 Conference Proceedings (Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices Loo, R., Delhougne, R., Meunier-Beillard, P., Caymax, M., Verheyen, P., Eneman, G., Wolf, I.De, Janssens, T., Benedetti, … Materials Research Society
3 Conference Proceedings N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure Eneman, G., Simoen, E., Delhougne, R., Verheyen, P., Ries, M., Loo, R., Caymax, M., Vandervorst, W., De Meyer, K. Materials Research Society	9 Conference Proceedings The Combination of Embedded Si_1-xGe_x S/D and Metal Gate Options for High Performance pMOS Transistors P. Verheyen, S. Severi, G. Eneman, R. Loo, D. Shamiryan Electrochemical Society
4 Conference Proceedings Electrical Performance and Reliability Aspects of Strain Engineered Deep Submicron CMOS Technologies C. Claeys, G. Eneman, M. Bargallo Gonzalez, S. Put, E. Simoen Electrochemical Society	10 Conference Proceedings Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions M.B. Gonzalez, N. Thomas, E. Simoen, P. Verheyen, A. Hikavyy Electrochemical Society
5 Conference Proceedings P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal Eneman, G., Simoen, E., Delhougne, R., Verheyen, P., Simons, V., Loo, R., Caymax, M., De Meyer, K., Vandervorst, W., … Electrochemical Society	11 Conference Proceedings Impact of Millisecond Laser Anneal on the Thermal Stress- Induced Defect Creation in Si_1-xGe_x Source /Drain Junctions M.B. Gonzalez, E. Simoen, E. Rosseel, P. Verheyen, L. Souriau Electrochemical Society
6 Conference Proceedings Analysis of Junctions Formed in Strained Si/SiGe Substrates Eneman, G., Simoen, E., Lauwers, A., Lindsay, R., Verheyen, P., Delhougne, R., Loo, R., Caymax, M., Meunier-Beillard, … Materials Research Society	12 Conference Proceedings (15.3) 1:50 - 2:10 PM - The Impact of Strained-Si/SiGe Heterostructure Dislocations on the Electrical Activity of Defects Czerwinski, A., Kordas, L., Bray, K.R., Zhao, W., Wise, R., Rozgonyi, G. A. (NC St. Univ.) Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12