Low and High Temperature Boron and Phosphorous Doping of Si for Junctions and MEMS Purposes

Low and High Temperature Boron and Phosphorous Doping of Si for Junctions and MEMS Purposes

Author(s):

Publication title:

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

Title of ser.:

ECS transactions

Ser. no.:

16(10)

Pub. Year:

2008

Page(from):

485

Page(to):

493

Pages:

9

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776561 [1566776562]

Language:

English

Call no.:

E23400/16-10

Type:

Conference Proceedings

Details

TDL ID:	ZA00047173
Series ID:	PA00000034
Conf. info. (Name):	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium ; PRiME Joint International Conference
Conf. info. (Number):	3rd ; 2008
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	3rd SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12-17, 2008

Similar Items:

1 Conference Proceedings Growth Kinetics and Boron-Doping of Vety High Ge Content Si₁₋xGex for Sources and Drains Engineering J. Hartmann, F. Gonzatti, J. Barnes, F. Fillot, T. Billon Electrochemical Society	7 Conference Proceedings Integration of Low and High Temperature Junction Anneals for 45 nm CMOS Lindsay, R., Pawlak, B., Henson, K., Satta, A., Severi, S., Lauwers, A., Surdeanu, R., McCoy, S., Gelpey, J., Pages, X., … Electrochemical Society
2 Conference Proceedings PHOSPHOUS AND BORON DOPING OF a-Si : H : EFFECTS OF DEPOSITION TEMPERATURE Pruppers, M. J.. M., Maessen, K. H. M., Bezemer, J., Habraken, F. H.. P. M., van der Weg, W. F. Materials Research Society	8 Conference Proceedings High-Pressure, High-Temperature Synthesis of Superhard Boron Suboxide Hubert, H., Garvie, L. A. J., Leinenweber, K., Buseck, P. R., Petuskey, W. T., McMillan, P. F. MRS - Materials Research Society
3 Conference Proceedings Electrical Properties of a Boron Doped Amorphous Silicon Bolometer Operating at Low Temperatures A. Heredia-J, F. J. De la Hidalga-W, W. A. Torres-J, A. Jaramillo-N Electrochemical Society	9 Conference Proceedings Low cost MEMS hydrophones K. J. Rebello, D. A. Kitchin, R. F. Henrick, F. Tejada SPIE - The International Society of Optical Engineering
4 Conference Proceedings Effect of Doping on High Temperature p-n Junction of NiO-ZnO System Orai, J., Kurokawa, H., Kawamura, K., Maruyama, T. Electrochemical Society	10 Conference Proceedings HEAVY PHOSPHOROUS DOPING OF EPITAXIAL SILICON AT LOW TEMPERATURE AND ATMOSPHERIC PRESSURE Sedgwick, T. O., Agnello, P. D., Nguyen-Ngoc, D., Kuan, T. S., Scilla, G. Materials Research Society
5 Conference Proceedings CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation F. Sarubbi, L. K. Nanver, T. L. Scholtes Electrochemical Society	11 Conference Proceedings Submillimeter wave detection and mixing experiments using high temperature Josephson junctions Chen, J., Kobayashi, E., Myoren, H., Nakajima, K., Yamashita, T., Linzen, S., Schmidl, F., Seidel, P. SPIE
6 Conference Proceedings Investigation of Fluorine Effect on the Boron Diffusion by Mean of Boron Redistribution in Shallow Delta-Doped Layers Halimaoui, A., Hartmann, J.M., Laviron, C., El-Farhane, R., Laugier, F. Materials Research Society	12 Conference Proceedings CHARACTERIZATION OF HEAVILY BORON-DOPED a-Si :H FILMS DEPOSITED AT LOW SUBSTRATES TEMPERATURES Jang, J., Kim, S. C., Lee, D. B., Lee, C. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12