Growth and Thermal Stability of SiGe/Si Superlattices on Bulk Si Wafers

Growth and Thermal Stability of SiGe/Si Superlattices on Bulk Si Wafers

Author(s):

Publication title:

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

Title of ser.:

ECS transactions

Ser. no.:

16(10)

Pub. Year:

2008

Page(from):

341

Page(to):

351

Pages:

11

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776561 [1566776562]

Language:

English

Call no.:

E23400/16-10

Type:

Conference Proceedings

Details

TDL ID:	ZA00047173
Series ID:	PA00000034
Conf. info. (Name):	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium ; PRiME Joint International Conference
Conf. info. (Number):	3rd ; 2008
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	3rd SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12-17, 2008

Similar Items:

1 Conference Proceedings (9.4) 11:40 - 12:00 PM - High Ge Content Si/SiGe Heterostructures for Microelectronics and Optoelectronics Purposes Bogumilowicz, Y., Hartmann, J.M., Damlencourt, J.F., Vandelle, B., Abbadie, A., Papon, A.-M., Rolland, G., Holliger, P., … Electrochemical Society	7 Conference Proceedings Reduced Pressure-Chemical Vapor Deposition of High Ge Content (20%-55%) SiGe Virtual Substrates Bogumilowicz, Y., Hartmann, J.M., Laugier, F., Rolland, G., Billon, T., Renard, V., Olshanetsky, E.B., Estibals, O., … Materials Research Society
2 Conference Proceedings In-Situ HCl Etching and Selective Epitaxial Growth of B-doped Ge for the Formation of Recessed and Raised Sources and Drains J. Hartmann, A. Papon, J.M. Fabbri, G. Rolland, T. Billon Electrochemical Society	8 Conference Proceedings Structural Properties of Tensile-Strained Si Layers Grown on Si₁₋xGex Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5) J. Hartmann, D. Rouchon, J. Barnes, M. Mermoux, T. Billon Electrochemical Society
3 Conference Proceedings Very High Temperature Growth of SiGe Virtual Substrates (15% < [Ge] < 45%) J. Hartmann, L. Baud, G. Rolland, J.M. Fabbri, T. Billon Electrochemical Society	9 Conference Proceedings Stability Criteria for 4H-SiC Bulk Growth Straubinger, T.L., Bickermann, M., Hofmann, D., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications
4 Conference Proceedings Reduced Pressure-Chemical Vapor Deposition of Ge Thick Layers on Si(001) for Microelectronics and Optoelectronics Purposes Hartmann, J.M., Papon, A.M., Holliger, P., Rolland, G., Billon, T., Rouviere, M., Vivien, L., Laval, S. Materials Research Society	10 Conference Proceedings Progress in 4H-SiC Bulk Growth Anikin, M., Pernot, E., Pelissier, B., Pons, M., Pisch, A., Bernard, C., Billon, T., Faure, C., Moulin, C., Madar, R. Trans Tech Publications
5 Conference Proceedings Growth Kinetics and Boron-Doping of Vety High Ge Content Si₁₋xGex for Sources and Drains Engineering J. Hartmann, F. Gonzatti, J. Barnes, F. Fillot, T. Billon Electrochemical Society	11 Conference Proceedings Growth and Characterization of UHV/CVD Si/SiGe Strained-Layer Superlattices on Bulk Crystal SiGe Substrates Sheng, S.R., Dion, M., McAlister, S.P., Rowell, N.L. Materials Research Society
6 Conference Proceedings Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features T.P. Ernst, F. Andrieu, O. Weber, J. Hartmann, C. Dupre Electrochemical Society	12 Conference Proceedings 63 Thermal Stability of a Novel Graded Layer for Relaxed SiGe/Si Heteroepitaxy Wong, L.H., Wong, C.C., Ferraris, C., White, T.J., Liu, J.P., Chan, L., Sohn, O.K., Hsia, L. C. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12