Weakening of Hardness and Modulus of the Si Lattice by Hydrogen Implantation for Layer Transfer in Wafer Bonding Technology

Weakening of Hardness and Modulus of the Si Lattice by Hydrogen Implantation for Layer Transfer in Wafer Bonding Technology

Author(s):

Publication title:

Semiconductor Wafer Bonding 10: Science, Technology, and Applications

Title of ser.:

ECS transactions

Ser. no.:

16(8)

Pub. Year:

2008

Page(from):

385

Page(to):

391

Pages:

7

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776547 [1566776546]

Language:

English

Call no.:

E23400/16-8

Type:

Conference Proceedings

Details

TDL ID:	ZA00047171
Series ID:	PA00000034
Conf. info. (Name):	Pacific Rim Meeting, PRiME ; Meeting of ECS-The Electrochemical Society ; Fall Meeting of The Electrochemical Society of Japan
Conf. info. (Number):	2008 ; 214th ; 2008
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.14-2008.10.16
Note for article:	Pacific Rim Meeting, PRiME 2008: joint International Meeting of the 214th Meeting of ECS-The Electrochemical Society, and the 2008 Fall Meeting of The Electrochemical Society of Japan

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