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InGaN-based Light Emitting Diodes with Photoelectrochemical Lateral Etching Process on InGaN Active Layers

Author(s):
Publication title:
State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) and Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9
Title of ser.:
ECS transactions
Ser. no.:
16(7)
Pub. Year:
2008
Page(from):
149
Page(to):
155
Pages:
7
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776530 [1566776538]
Language:
English
Call no.:
E23400/16-7
Type:
Conference Proceedings

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