Preferential <111> A Pore Propagation Mechanism in n-InP Anodized in KOH

Preferential <111> A Pore Propagation Mechanism in n-InP Anodized in KOH

Author(s):

Publication title:

Porous semiconductors : a symposium held in memory of Vitali Parkhutik and Volker Lehmann

Title of ser.:

ECS transactions

Ser. no.:

16(3)

Pub. Year:

2008

Page(from):

393

Page(to):

404

Pages:

12

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776493 [156677649X]

Language:

English

Call no.:

E23400/16-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00047169
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Porous Semiconductors ; Meeting of the Electrochemical Society
Conf. info. (Number):	2008 ; 214th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	International Symposium on Porous Semiconductors held in Honolulu, Hawaii, as part of the 214th Meeting of the Electrochemical Socity, on October 12-17, 2008

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