Uphill Drift of Vacancies and Self-Interstitials in Silicon Crystal Growth

Uphill Drift of Vacancies and Self-Interstitials in Silicon Crystal Growth

Author(s):

Publication title:

High Purity Silicon 10

Title of ser.:

ECS transactions

Ser. no.:

16(6)

Pub. Year:

2008

Page(from):

15

Page(to):

23

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776523 [156677652X]

Language:

English

Call no.:

E23400/16-6

Type:

Conference Proceedings

Details

TDL ID:	ZA00052896
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
Conf. info. (Number):	10th ; 214th
Conf. info. (Venue):	Honolulu, HI, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	10th International Symposium on High Purity Silicon, 214th ECS Meeting, Honolulu, HI, October 12 - October 17, 2008

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