Plasma Nitridation of HfO2 Gate Dielectric on p-GaAs Substrates
- Author(s):
- Publication title:
- Physics and technology of high-k gate dielectrics 6
- Title of ser.:
- ECS transactions
- Ser. no.:
- 16(5)
- Pub. Year:
- 2008
- Page(from):
- 387
- Page(to):
- 392
- Pages:
- 6
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566776516 [1566776511]
- Language:
- English
- Call no.:
- E23400/16-5
- Type:
- Conference Proceedings
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