Effect of Ultrathin Si Passivation Layer for Ge MOS Structure with La<sub>2</sub>O<sub>3</sub> Gate Dielectric

Effect of Ultrathin Si Passivation Layer for Ge MOS Structure with La₂O₃ Gate Dielectric

Author(s):

Publication title:

Physics and technology of high-k gate dielectrics 6

Title of ser.:

ECS transactions

Ser. no.:

16(5)

Pub. Year:

2008

Page(from):

285

Page(to):

293

Pages:

9

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776516 [1566776511]

Language:

English

Call no.:

E23400/16-5

Type:

Conference Proceedings

Details

TDL ID:	ZA00049541
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
Conf. info. (Number):	6th ; 214th
Conf. info. (Venue):	Honolulu, HI, USA
Conf. info. (Date):	2008.10.12-2008.10.17
Note for article:	The sixth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Honolulu, Hawaii, October 13 to 15, 2008

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Effect of Ultrathin Si Passivation Layer for Ge MOS Structure with La2O3 Gate Dielectric

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Effect of Ultrathin Si Passivation Layer for Ge MOS Structure with La₂O₃ Gate Dielectric