Electrical Properties of High-κ ALD HfO2 Deposited on Strained Si Layers Epitaxially Grown on Si0.8Ge0.2/Si Substrates

Electrical Properties of High-κ ALD HfO2 Deposited on Strained Si Layers Epitaxially Grown on Si0.8Ge0.2/Si Substrates

Author(s):

Publication title:

Atomic layer deposition applications 4

Title of ser.:

ECS transactions

Ser. no.:

16(4)

Pub. Year:

2007

Page(from):

51

Page(to):

58

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776509 [1566776503]

Language:

English

Call no.:

E23400/11-4

Type:

Conference Proceedings

Details

TDL ID:	ZA00052898
Series ID:	PA00000034
Conf. info. (Name):	Symposium on Atomic Layer Deposition Applications ; Meeting of the Electrochemical Society
Conf. info. (Number):	4th ; 214th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2008.10.13-2008.10.15
Note for article:	4th Symposium on Atomic Layer Deposition Applications, 214th Meeting of the Electrochemical Society, Honolulu, Hawaii, October 13-15, 2008

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