Tuning the Absolute Band Gap of Silicon Photonic Crystals by Atomic Layer Deposition (ALD) Interfacial Layers

Tuning the Absolute Band Gap of Silicon Photonic Crystals by Atomic Layer Deposition (ALD) Interfacial Layers

Author(s):

Publication title:

Atomic layer deposition applications 3

Title of ser.:

ECS transactions

Ser. no.:

11(7)

Pub. Year:

2007

Page(from):

259

Page(to):

267

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775731 [1566775736]

Language:

English

Call no.:

E23400/11-7

Type:

Conference Proceedings

Details

TDL ID:	ZA00052897
Series ID:	PA00000034
Conf. info. (Name):	Symposium on Atomic Layer Deposition Applications ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 212th
Conf. info. (Venue):	Washington, DC, USA
Conf. info. (Date):	2007.10.08-2007.10.09
Note for article:	3rd Symposium on Atomic Layer Deposition Applications, 212th Meeting of the Electrochemical Society, Hilton Washington, Washington, DC, October 8-9, 2007

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