Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment | 東京工業大学附属図書館文献データベース

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Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment

Author(s):: P. McIntyre
Publication title:: Physics and technology of high-k gate dielectrics 5
Title of ser.:: ECS transactions
Ser. no.:: 11(4)
Pub. Year:: 2007
Page(from):: 235
Page(to):: 249
Pages:: 15
Pub. info.:: Pennington, NJ: Electrochemical Society
ISSN:: 19385862
ISBN:: 9781566775700 [1566775701]
Language:: English
Call no.:: E23400/11-4
Type:: Conference Proceedings

Details

TDL ID:	ZA00049542
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
Conf. info. (Number):	5th ; 212th
Conf. info. (Venue):	Washington, D.C., USA
Conf. info. (Date):	2007.10.08-2007.10.10
Note for article:	Fifth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Washington, DC from October 8 to 10, 200

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