Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electrodes on HfSiON by Employing Ru Gate Electrodes

Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electrodes on HfSiON by Employing Ru Gate Electrodes

Author(s):

Publication title:

Physics and technology of high-k gate dielectrics 5

Title of ser.:

ECS transactions

Ser. no.:

11(4)

Pub. Year:

2007

Page(from):

169

Page(to):

180

Pages:

12

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775700 [1566775701]

Language:

English

Call no.:

E23400/11-4

Type:

Conference Proceedings

Details

TDL ID:	ZA00049542
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
Conf. info. (Number):	5th ; 212th
Conf. info. (Venue):	Washington, D.C., USA
Conf. info. (Date):	2007.10.08-2007.10.10
Note for article:	Fifth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Washington, DC from October 8 to 10, 200

Similar Items:

1 Conference Proceedings Theoretical Studies on Fermi Level Pining of Hf-Based High-κ Gate Stacks Based on Thermodynamics K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, A. Ohta Electrochemical Society	7 Conference Proceedings Tight Distribution of Dielectric Characteristics of HfSiON in Metal Gate Devices R. Hasunuma, T. Naito, C. Tamura, A. Uedono, K. Shiraishi Electrochemical Society
2 Conference Proceedings Photoemission Study of Metal/HfSiON Gate Stack S. Miyazaki, H. Yoshinaga, A. Ohta, Y. Akasaka, K. Shiraishi Electrochemical Society	8 Conference Proceedings Physics of Metal/High-k Interfaces T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, T. Nakaoka, K. Torii, A. Ohta, P. Ahmet, K. Ohmori, N. Umezawa, H. … Electrochemical Society
3 Conference Proceedings Flat-Band Voltage Shift of MOS Capacitors With Tantalum Nitride Gate Electrodes Induced by Post Metallization Annealing Kadoshima, M., Yamamoto, K., Fujiwara, H., Akiyama, K., Tominaga, K., Yamagishi, N., Iwamoto, K., Ohno, M., Yasuda, T., … Materials Research Society	9 Conference Proceedings Effect of Fermi Level Pinning at the Surface During OMVPE Growth Cohen, R. M., Chen, C. Y., Li, W. M., Simons, D. S., Chi, P. H. MRS - Materials Research Society
4 Conference Proceedings Thermal Robustness of VFB and EOT in HfOx(N) p-MOS Devices with Partially Silicided Pt Gate Electrodes M. Kadoshima, T. Nabatame, M. Takahashi, A. Ogawa, K. Iwamoto, W. Mizubasyashi, H. Ota, H. Satake, A. Toriumi Electrochemical Society	10 Conference Proceedings Barrier Height and Fermi Level Pinning at Schottky Interfaces Patel,K.D., Modi,B.P., Srivastava,R. Narosa Publishing House
5 Conference Proceedings Relation between Solubility of Silicon in High-k Oxides and the Effect of Fermi Level Pinning N. Umezawa, K. Shiraishi, K. Kakushima, H. Iwai, K. Ohmori Electrochemical Society	11 Conference Proceedings Novel HfSiON Gate Dielectric for Advanced CMOS Devices Colombo, L., Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Shanware, A., Bevan, M.J., Bu, H., Tsung, L. Electrochemical Society
6 Conference Proceedings Theoretical Studies on Metal/High-k Gate Stacks K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, … Electrochemical Society	12 Conference Proceedings 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M., Li, H.-J., Lysaght, P., Alshareef, H. … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12