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Epitaxial lateral overgrowth of GaN-based light emitting diodes on SiO2 nanorod-arrgy patterned sapphire substrates by MOCVD

Author(s):
  • C. H. Chiu ( National Chiao Tung Univ., Taiwan China )
  • C. L. Chao ( National Chiao Tung Univ., Taiwan China )
  • M. H. Lo ( National Chiao Tung Univ., Taiwan China )
  • Y. J. Cheng ( Academia Sinica, Taiwan China )
  • H. C. Kuo ( National Chiao Tung Univ., Taiwan China )
Publication title:
Optoelectronic Materials and Devices III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
7135
Pub. Year:
2008
Vol.:
1
Page(from):
71351Z-1
Page(to):
71351Z-7
Pages:
7
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819473752 [0819473758]
Language:
English
Call no.:
P63600/7135
Type:
Conference Proceedings

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