The effect of argon ion implantation and preanodization argon ion implantation on photoluminescence of porous silicon

The effect of argon ion implantation and preanodization argon ion implantation on photoluminescence of porous silicon

Author(s):

X. Lü ( Xi'an Jiaotong Univ., China )
T. Xue ( Xinjiang Univ., China )
Z. Jia ( Xinjiang Univ., China )

Publication title:

Optoelectronic Materials and Devices III

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

7135

Pub. Year:

2008

Vol.:

1

Page(from):

71351N-1

Page(to):

71351N-8

Pages:

8

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819473752 [0819473758]

Language:

English

Call no.:

P63600/7135

Type:

Conference Proceedings

Details

TDL ID:	ZA00052766
Series ID:	PA00000029
Conf. info. (Name):	Asia Communications and Photonics : Optoelectronic Materials and Devices
Conf. info. (Number):	2008 : 3rd
Conf. info. (Venue):	Hangzhou, China
Conf. info. (Date):	2008.10.27-2008.10.30
Note for article:	Optoelectronic Materials and Devices III, 27-30 October 2008, Hangzhou, China - Session 6B. Si Photonics, 71351N, 7135-62

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