Growth of BxGa1-xAs, BxAl1-xAs and BxGa1-x-yInyAs epilayers on (001)GaAs by LP-MOCVD

Growth of B_xGa_1-xAs, B_xAl_1-xAs and B_xGa_1-x-yIn_yAs epilayers on (001)GaAs by LP-MOCVD

Author(s):

Q. Wang ( Beijing Univ. of Posts and Telecommunications, China )
X. Ren ( Beijing Univ. of Posts and Telecommunications, China )
Y. Huang ( Beijing Univ. of Posts and Telecommunications, China )
H. Huang ( Beijing Univ. of Posts and Telecommunications, China )
S. Cai ( Beijing Univ. of Posts and Telecommunications, China )

Publication title:

Optoelectronic Materials and Devices III

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

7135

Pub. Year:

2008

Vol.:

1

Page(from):

71350K-1

Page(to):

71350K-8

Pages:

8

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819473752 [0819473758]

Language:

English

Call no.:

P63600/7135

Type:

Conference Proceedings

Details

TDL ID:	ZA00052766
Series ID:	PA00000029
Conf. info. (Name):	Asia Communications and Photonics : Optoelectronic Materials and Devices
Conf. info. (Number):	2008 : 3rd
Conf. info. (Venue):	Hangzhou, China
Conf. info. (Date):	2008.10.27-2008.10.30
Note for article:	Optoelectronic Materials and Devices III, 27-30 October 2008, Hangzhou, China - Session 2B. Novel Active Devices I, 71350K, 7135-19

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