The study of EUVL mask defect inspection technology for 32-nm half-pitch node device and beyond

The study of EUVL mask defect inspection technology for 32-nm half-pitch node device and beyond

Author(s):

H. Shigemura ( MIRAI-Semiconductor Leading Edge Technologies, Inc., Japan )
T. Amano ( MIRAI-Semiconductor Leading Edge Technologies, Inc., Japan )
Y. Nishiyama ( MIRAI-Semiconductor Leading Edge Technologies, Inc., Japan )
O. Suga ( MIRAI-Semiconductor Leading Edge Technologies, Inc., Japan )
T. Terasawa ( MIRAI-Semiconductor Leading Edge Technologies, Inc., Japan )

Publication title:

Photomask technology 2008

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

7122

Pub. Year:

2008

Vol.:

2

Page(from):

71222F-1

Page(to):

71222F-10

Pages:

10

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819473554 [0819473553]

Language:

English

Call no.:

P63600/7122

Type:

Conference Proceedings

Details

TDL ID:	ZA00052753
Series ID:	PA00000029
Conf. info. (Name):	SPIE Photomask Technology : Annual BACUS Symposium on Photomask Technology
Conf. info. (Number):	2008 : 28th
Conf. info. (Venue):	Monterey, California, USA
Conf. info. (Date):	2008.10.07-2008.10.10
Note for article:	Photomask technology 2008, 7-10 October 2008, Monterey, California, USA - Session 20. EUV Mask Inspection II, 71222F, 7122-87

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