Blank Cover Image

Suppressing premature edge breakdown for InP/InGaAs avalanche photodiodes by modeling analyses

Author(s):
Publication title:
Infrared systems and photoelectronic technology III : 10-12 August 2008, San Diego, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
7055
Pub. Year:
2008
Pt.:
B
Page(from):
70550Y-1
Page(to):
70550Y-8
Pages:
8
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819472755 [0819472751]
Language:
English
Call no.:
P63600/7055
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Time-domain modeling of InP/InGaAs avalanche photodiodes

Xiao,Y.G., Deen,M.J.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings Characterization of InP/InGaAs Avalanche Photodiodes for Optical Fiber Telecommunication

An, S., Deen, M.J., Bandyopadhyay, A., Clark, W.R., Vetter, A.S., Yu, J., Noel, J.P., Svilans, M.

Electrochemical Society
2 Conference Proceedings Modeling of avalanche photodiodes by Crosslight APSYS [6294-43]

Xiao Y. G., Li Z. Q., Li Z. M. S.

SPIE - The International Society of Optical Engineering
8 Conference Proceedings Single-photon detector at 1550 nm with gate-mode quenched InGaAs/InP avalanche photodiode

Wu, G., Zhou, C., Chen, X., Li, X., Zeng, H.

SPIE - The International Society of Optical Engineering
3 Conference Proceedings Modelling of Breakdown Voltage of InP/InGaAs Avalanche Photodiodes at Low Temperatures

Bandyopadhyay, A., An, S., Deen, M.J., Tarof, L.E.

Electrochemical Society
9 Conference Proceedings Performance dependences On multiplication layer thickness for InP/lnGaAs avalanche photodiodes based on time domain modeling [5881-25]

Xiao, Y., Bhat, I., Abedin, M. N.

SPIE - The International Society of Optical Engineering
4 Conference Proceedings Modeling of resonant cavity enhanced separate absorption charge and multiplication avalanche photodiodes by Crosslight APSYS

Y. G. Xiao, Z. Q. Li, Z. M. S. Li

Society of Photo-optical Instrumentation Engineers
10 Conference Proceedings Power Limitation Due to Premature Breakdown in AlGaN/GaN HFETs

Gradinaru, G., Kao, N. C., Yang, J., Chen, Q., Khan, M. A., Sudarshan, T. S.

MRS - Materials Research Society
5 Conference Proceedings Time Domain Modeling Of Temperature Dependent Characteristics Of InP/InGaAs Avalanche Photodiodes Based on a Simplified Approach

Xiao, Y.G., Deen, M.J., Bandyopadhayay, A.

Electrochemical Society
11 Conference Proceedings InGaAs/InP avalanche photodiode arrays for eye-safe three-dimensional imaging

Dries, J.C., Martin, T., Huang, W., Lange, M.J., Cohen, M.J.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Improved breakdown model for estimating dark count rate in avalanche photodiodes with InP and InAIAs multiplication layers [6214-29]

Huntington A. S., Compton M. A., Williams G. M.

SPIE - The International Society of Optical Engineering
12 Conference Proceedings Large-area InAlAs/InGaAs single-photon-counting avalanche photodiodes

Boisvert, J.C., Kinsey, G.S., McAlister, D., Isshiki, T., Sudharsanan, R., Krainak, M.

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12