Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs
- Author(s):
- G. I. Zebrev ( Moscow Engineering Physics Institute, Russia )
- M. S. Gorbunov ( Moscow Engineering Physics Institute, Russia )
- V. S. Pershenkov ( Moscow Engineering Physics Institute, Russia )
- Publication title:
- Micro- and nanoelectronics 2007 : 1-5 October 2007, Zvenigorod, Russia
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 7025
- Pub. Year:
- 2008
- Page(from):
- 702517-1
- Page(to):
- 702517-8
- Pages:
- 8
- Pub. info.:
- Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
- ISSN:
- 0277786X
- ISBN:
- 9780819472380 [0819472387]
- Language:
- English
- Call no.:
- P63600/7025
- Type:
- Conference Proceedings
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